A breakthrough and a pioneering error correction technique in the data transmission process, possibly holds a key to the future of non-volatile memories in next-generation of computers. Termed as Spin-torque transfer magnetic random access memory (STT-MRAM), the improved error correction technique in STT-MRAM showed increased tolerance towards fluctuations in electrical resistance of devices, which could aid in smoother device manufacturing process and super-fast device boot-up times. And STT-MRAM promises scalability and cost-efficiency.
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About Raj Agrawal
A professional Mobile Software Engineer by profession, an M.C.A and M.C.P by qualification. A guitar hobbyist and an appreciator of Indian classical, folk, metal and baroque music.